{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728620","patent":{"patent_number":"US-9728620","title":"Semiconductor device having metal gate structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-08-20T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"The present disclosure provides a semiconductor device including a metal gate structure and formation method thereof. The semiconductor device includes a substrate and a dielectric layer disposed on the substrate. The dielectric layer includes a trench. A diffusion barrier layer is disposed over a bottom surface and sidewall surfaces of the trench in the dielectric layer. The diffusion barrier layer includes at least a titanium-nitride stacked layer. The titanium-nitride stacked layer includes a TiNx layer disposed over the bottom surface and the sidewall surfaces of the trench, a TiN layer on the TiNx layer, and a TiNy layer on the TiN layer, x<1 and y>1. A metal gate is filled in the trench and disposed on the diffusion barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having metal gate structure and fabrication method thereof","description":"The present disclosure provides a semiconductor device including a metal gate structure and formation method thereof. The semiconductor device includes a substrate and a dielectric layer disposed on t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728620","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728620","citation_suggestion":"Patentable. \"Semiconductor device having metal gate structure and fabrication method thereof\" (US-9728620). https://patentable.app/patents/US-9728620","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728620","json":"https://patentable.app/api/llm-context/US-9728620","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:50:57.178Z"}