{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728626","patent":{"patent_number":"US-9728626","title":"Almost defect-free active channel region","assignee":null,"inventors":[],"filing_date":"2016-08-30T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A FinFET includes a fin and a conductive gate surrounding a top channel region of the fin, the channel region of the fin being filled with an epitaxial semiconductor channel material extending below a bottom surface of the conductive gate. The top channel region of the fin includes epitaxial semiconductor channel material that is at least majority defect free, the at least a majority of defects associated with forming the epitaxial semiconductor material in the channel region being trapped below a top portion of the channel region. The FinFET may be achieved by a method, the method including providing a starting semiconductor structure, the starting semiconductor structure including a bulk semiconductor substrate, semiconductor fin(s) on the bulk semiconductor substrate and surrounded by a dielectric layer, and a dummy gate over a channel region of the semiconductor fin(s). The method further includes forming source and drain recesses adjacent the channel region, removing the dummy gate, recessing the semiconductor fin(s), the recessing leaving a fin opening above the recessed semiconductor fin(s), and growing epitaxial semiconductor channel material in the fin opening, such that at least a majority of defects associated with the growing are trapped at a bottom portion of the at least one fin opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Almost defect-free active channel region","description":"A FinFET includes a fin and a conductive gate surrounding a top channel region of the fin, the channel region of the fin being filled with an epitaxial semiconductor channel material extending below a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728626","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728626","citation_suggestion":"Patentable. \"Almost defect-free active channel region\" (US-9728626). https://patentable.app/patents/US-9728626","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728626","json":"https://patentable.app/api/llm-context/US-9728626","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:58:16.063Z"}