{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728628","patent":{"patent_number":"US-9728628","title":"Silicon carbide semiconductor device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2015-07-22T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A silicon carbide epitaxial layer includes: a first impurity region; a second impurity region; and a third impurity region. A gate insulating film is in contact with the first impurity region, the second impurity region, and the third impurity region. A groove portion is formed in a surface of the first impurity region, the surface being in contact with the gate insulating film, the groove portion extending in one direction along the surface, a width of the groove portion in the one direction being twice or more as large as a width of the groove portion in a direction perpendicular to the one direction, a maximum depth of the groove portion from the surface being not more than 10 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method for manufacturing same","description":"A silicon carbide epitaxial layer includes: a first impurity region; a second impurity region; and a third impurity region. A gate insulating film is in contact with the first impurity region, the sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728628","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728628","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method for manufacturing same\" (US-9728628). https://patentable.app/patents/US-9728628","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728628","json":"https://patentable.app/api/llm-context/US-9728628","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:21.888Z"}