{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728630","patent":{"patent_number":"US-9728630","title":"High-electron-mobility transistor having a buried field plate","assignee":null,"inventors":[],"filing_date":"2014-09-05T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A high-electron-mobility field effect transistor is formed with a buffer region having a stepped lateral profile, the stepped lateral profile having first, second and third cross-sections of the buffer region, the first cross-section being thicker than the third cross-section and including a buried field plate, the second cross-section interposed between the first and third cross-sections and forming oblique angles with the first and third cross-sections. A barrier region is formed along the stepped lateral profile. The barrier region is separated from the buried field plate by a portion of the buffer region. The buffer region is formed from a first semiconductor material and the barrier region is formed from a second semiconductor material. The first and second semiconductor materials have different band-gaps such that an electrically conductive channel of a two-dimensional charge carrier gas arises at an interface between the buffer and barrier regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-electron-mobility transistor having a buried field plate","description":"A high-electron-mobility field effect transistor is formed with a buffer region having a stepped lateral profile, the stepped lateral profile having first, second and third cross-sections of the buffe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728630","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728630","citation_suggestion":"Patentable. \"High-electron-mobility transistor having a buried field plate\" (US-9728630). https://patentable.app/patents/US-9728630","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728630","json":"https://patentable.app/api/llm-context/US-9728630","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:49.972Z"}