{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728650","patent":{"patent_number":"US-9728650","title":"Thin film transistor array panel and conducting structure","assignee":null,"inventors":[],"filing_date":"2016-03-15T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"A thin film transistor array panel includes a first conductive layer including a gate electrode; a channel layer disposed over the gate; and a second conductive layer disposed over the channel layer. The second conductive layer includes a multi-layered portion defining a source electrode and a drain electrode, which includes a first sub-layer, a second sub-layer, and a third sub-layer sequentially disposed one over another. Both the third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that that in the first sub-layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin film transistor array panel and conducting structure","description":"A thin film transistor array panel includes a first conductive layer including a gate electrode; a channel layer disposed over the gate; and a second conductive layer disposed over the channel layer. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728650","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728650","citation_suggestion":"Patentable. \"Thin film transistor array panel and conducting structure\" (US-9728650). https://patentable.app/patents/US-9728650","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728650","json":"https://patentable.app/api/llm-context/US-9728650","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:37:49.272Z"}