{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728654","patent":{"patent_number":"US-9728654","title":"Semiconductor device and method of manufacturing same","assignee":null,"inventors":[],"filing_date":"2016-03-01T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device includes: a first conductive type semiconductor device; a first conductive type drift region formed by epitaxial growth on the semiconductor substrate; a plurality of first conductive type vertical implantation regions formed by multistage ion implantation in the drift region, the vertical implantation regions having a prescribed vertical implantation width and a prescribed drift region width; an anode electrode disposed on the front surface of the drift region opposite to the semiconductor substrate, the anode electrode being in Schottky contact with the drift region and in ohmic contact with the first conductive type vertical implantation regions; and a cathode electrode disposed on the rear surface of the semiconductor substrate opposite to the drift region, the cathode electrode being in ohmic contact with the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing same","description":"A semiconductor device includes: a first conductive type semiconductor device; a first conductive type drift region formed by epitaxial growth on the semiconductor substrate; a plurality of first cond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728654","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728654","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing same\" (US-9728654). https://patentable.app/patents/US-9728654","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728654","json":"https://patentable.app/api/llm-context/US-9728654","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:29:55.549Z"}