{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728711","patent":{"patent_number":"US-9728711","title":"Thermally-assisted MRAM cells with improved reliability at writing","assignee":null,"inventors":[],"filing_date":"2014-04-11T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":9,"abstract":"MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thermally-assisted MRAM cells with improved reliability at writing","description":"MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728711","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728711","citation_suggestion":"Patentable. \"Thermally-assisted MRAM cells with improved reliability at writing\" (US-9728711). https://patentable.app/patents/US-9728711","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728711","json":"https://patentable.app/api/llm-context/US-9728711","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:05:07.769Z"}