{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9732004","patent":{"patent_number":"US-9732004","title":"Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target","assignee":null,"inventors":[],"filing_date":"2015-04-15T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2 V−1 sec−1 or higher."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target","description":"Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputt","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9732004","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9732004","citation_suggestion":"Patentable. \"Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target\" (US-9732004). https://patentable.app/patents/US-9732004","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9732004","json":"https://patentable.app/api/llm-context/US-9732004","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:15:03.984Z"}