{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9733570","patent":{"patent_number":"US-9733570","title":"Multi-line width pattern created using photolithography","assignee":null,"inventors":[],"filing_date":"2015-10-15T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-line width pattern created using photolithography","description":"Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9733570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9733570","citation_suggestion":"Patentable. \"Multi-line width pattern created using photolithography\" (US-9733570). https://patentable.app/patents/US-9733570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9733570","json":"https://patentable.app/api/llm-context/US-9733570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:11.216Z"}