{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9734881","patent":{"patent_number":"US-9734881","title":"High sensing margin magnetic resistive memory device in which a memory cell read and write select transistors to provide different read and write paths","assignee":null,"inventors":[],"filing_date":"2016-01-28T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device and a method for forming a memory device are disclosed. The memory device includes a memory cell having a storage unit coupled to a cell selector unit. The storage unit includes first and second storage elements. Each of the first and second storage elements includes first and second terminals. The second terminal of the first storage element is coupled to a write source line (SL-W) and the second terminal of the second storage element is coupled to a bit line (BL). The cell selector unit includes first and second selectors. The first selector includes a write select transistor (TW) and the second selector includes a first read transistor (TR1) and a second read transistor (TR2). The first selector is coupled to a word line (WL) for selectively coupling a write path to the storage unit and the second selector is coupled to a read line (RL) for selectively coupling a read path to the storage unit."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High sensing margin magnetic resistive memory device in which a memory cell read and write select transistors to provide different read and write paths","description":"A memory device and a method for forming a memory device are disclosed. The memory device includes a memory cell having a storage unit coupled to a cell selector unit. The storage unit includes first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9734881","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9734881","citation_suggestion":"Patentable. \"High sensing margin magnetic resistive memory device in which a memory cell read and write select transistors to provide different read and write paths\" (US-9734881). https://patentable.app/patents/US-9734881","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9734881","json":"https://patentable.app/api/llm-context/US-9734881","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:44:46.570Z"}