{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9734882","patent":{"patent_number":"US-9734882","title":"Magnetic memory cells with high write current and read stability","assignee":null,"inventors":[],"filing_date":"2016-02-01T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Memory cells and methods of forming thereof are disclosed. The memory cell includes a substrate and first and second select transistors. The first select transistor serves as a write selector and the second select transistor serves as a read selector. The gate of first select transistor is coupled to a write wordline (WL_w) and the gate of the second select transistor is coupled to a read/write wordline (WL_r/w). The source regions of the first and second select transistors are coupled to a source line (SL). A body well is disposed in the substrate. The body well serves as a body of the first and second select transistors. A back bias is applied to the body of the select transistors. A storage element which includes a magnetic tunnel junction (MTJ) element is coupled with a bitline (BL) and the first and the second select transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic memory cells with high write current and read stability","description":"Memory cells and methods of forming thereof are disclosed. The memory cell includes a substrate and first and second select transistors. The first select transistor serves as a write selector and the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9734882","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9734882","citation_suggestion":"Patentable. \"Magnetic memory cells with high write current and read stability\" (US-9734882). https://patentable.app/patents/US-9734882","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9734882","json":"https://patentable.app/api/llm-context/US-9734882","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:49:43.188Z"}