{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9734908","patent":{"patent_number":"US-9734908","title":"Writing method for resistive memory cell and resistive memory","assignee":null,"inventors":[],"filing_date":"2016-03-22T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"A writing method for a resistive memory cell and a resistive memory using thereof are provided. In the writing method, a group of RESET signals is provided to the resistive memory cell, so as to execute a writing operation. A current of the resistive memory cell is detected to determine whether the writing operation of the resistive memory cell is completed. When the writing operation of the resistive memory cell is not completed, widths of filament paths in the resistive memory cell are determined to be narrowed or not. The voltage of word line of the resistive memory cell in the group of RESET signals is reduced when the widths of the filament paths in the resistive memory cell are narrowed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Writing method for resistive memory cell and resistive memory","description":"A writing method for a resistive memory cell and a resistive memory using thereof are provided. In the writing method, a group of RESET signals is provided to the resistive memory cell, so as to execu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9734908","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9734908","citation_suggestion":"Patentable. \"Writing method for resistive memory cell and resistive memory\" (US-9734908). https://patentable.app/patents/US-9734908","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9734908","json":"https://patentable.app/api/llm-context/US-9734908","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:00:43.506Z"}