{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735005","patent":{"patent_number":"US-9735005","title":"Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices","assignee":null,"inventors":[],"filing_date":"2016-03-11T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices","description":"A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735005","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735005","citation_suggestion":"Patentable. \"Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices\" (US-9735005). https://patentable.app/patents/US-9735005","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735005","json":"https://patentable.app/api/llm-context/US-9735005","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:39:57.611Z"}