{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735010","patent":{"patent_number":"US-9735010","title":"Fabrication of semiconductor fin structures","assignee":null,"inventors":[],"filing_date":"2016-05-27T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"A semiconductor substrate is a provided and an insulating layer is formed thereon. A cavity structure is formed above the insulating layer, including a lateral growth channel and a fin seed structure arranged in the lateral growth channel. The fin seed structure provides a seed surface for growing a fin structure. One or more first semiconductor structures of a first semiconductor material and one or more second semiconductor structures of a second, different, semiconductor material are grown sequentially in the growth channel from the seed surface in an alternating way. The first semiconductor structures provide a seed surface for the second semiconductor structures and the second semiconductor structures provide a seed surface for the first semiconductor structures. The second semiconductor structures are selectively etched, thereby forming the fin structure comprising a plurality of parallel fins of the first semiconductor structures. Corresponding semiconductor structures are also included."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of semiconductor fin structures","description":"A semiconductor substrate is a provided and an insulating layer is formed thereon. A cavity structure is formed above the insulating layer, including a lateral growth channel and a fin seed structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735010","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735010","citation_suggestion":"Patentable. \"Fabrication of semiconductor fin structures\" (US-9735010). https://patentable.app/patents/US-9735010","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735010","json":"https://patentable.app/api/llm-context/US-9735010","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:35:48.490Z"}