{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735013","patent":{"patent_number":"US-9735013","title":"Ion implantation for improved contact hole critical dimension uniformity","assignee":null,"inventors":[],"filing_date":"2015-12-16T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Provided herein are approaches for patterning a semiconductor device. In an exemplary approach, a method includes providing a set of contact openings through a photoresist formed atop a substrate, and implanting ions into just a sidewall surface of the set of contact openings. In an exemplary approach, the ions are implanted at an implant angle nonparallel with the sidewall surface to prevent the ions from implanting a surface of the substrate within the set of contact openings, and to form a treated layer along an entire height of the contact opening. The method further includes etching the substrate within the set of contact openings after the ions are implanted into the sidewall surface. As a result, by using an angled ion implantation to the contact opening sidewall surface as a pretreatment prior to etching, local critical dimension uniformity is improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ion implantation for improved contact hole critical dimension uniformity","description":"Provided herein are approaches for patterning a semiconductor device. In an exemplary approach, a method includes providing a set of contact openings through a photoresist formed atop a substrate, and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735013","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735013","citation_suggestion":"Patentable. \"Ion implantation for improved contact hole critical dimension uniformity\" (US-9735013). https://patentable.app/patents/US-9735013","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735013","json":"https://patentable.app/api/llm-context/US-9735013","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:30.841Z"}