{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735017","patent":{"patent_number":"US-9735017","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-01-15T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A false report on appearance inspection of a semiconductor device is prevented by suppressing variation in surface state of an electrodeposited gold electrode. In formation of an electrodeposited gold electrode, an electrodeposited gold electrode comprised of a plurality of electrodeposited gold layers in the stack is formed by alternately repeating a step of performing energization between an anode electrode and a cathode electrode provided in a treatment cup of a plating apparatus to cause crystal growth of an electrodeposited gold layer (energization ON), and a step of performing no energization between the anode electrode and the cathode electrode (energization OFF). Consequently, even if aging variation occurs in composition of the plating solution, variation in surface state of the electrodeposited gold electrode is suppressed, and a surface state with a surface roughness of, for example, about 0.025 rad can be maintained."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A false report on appearance inspection of a semiconductor device is prevented by suppressing variation in surface state of an electrodeposited gold electrode. In formation of an electrodeposited gold","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735017","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735017","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9735017). https://patentable.app/patents/US-9735017","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735017","json":"https://patentable.app/api/llm-context/US-9735017","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:07.676Z"}