{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735049","patent":{"patent_number":"US-9735049","title":"Method for fabricating semiconductor structure with passivation sidewall block","assignee":null,"inventors":[],"filing_date":"2015-11-25T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes receiving a substrate with two sections of conductors thereon that are adjacent to each other, and a valley between the two sections of the conductors, filling the valley with a first passivation material to form a passivation valley, applying a second passivation material overlying the two sections of conductors and the passivation valley and over the substrate, and removing the second passivation material overlying the two sections of conductors and the passivation valley, and the second passivation material over the substrate but not in contact with the two sections of conductors and the passivation valley."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor structure with passivation sidewall block","description":"A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes receiving a substrate with two sections of conductors thereon that are adjacent to each","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735049","citation_suggestion":"Patentable. \"Method for fabricating semiconductor structure with passivation sidewall block\" (US-9735049). https://patentable.app/patents/US-9735049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735049","json":"https://patentable.app/api/llm-context/US-9735049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:02:18.212Z"}