{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735051","patent":{"patent_number":"US-9735051","title":"Semiconductor device interconnect structures formed by metal reflow process","assignee":null,"inventors":[],"filing_date":"2015-12-14T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Methods are devices are provided in which interconnection structures are formed using metal reflow techniques. For example, a method to fabricate a semiconductor device includes forming an opening in an ILD (inter-level dielectric) layer. The opening includes a via hole and a trench. A layer of diffusion barrier material is deposited to cover the ILD layer and to line the opening with the diffusion barrier material. A layer of first metallic material is deposited on the layer of diffusion barrier material to cover the ILD layer and to line the opening with the first metallic material. A reflow process is performed to allow the layer of first metallic material to reflow into the opening and at least partially fill the via hole with the first metallic material. A layer of second metallic material is deposited to at least partially fill a remaining portion of the opening in the ILD layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device interconnect structures formed by metal reflow process","description":"Methods are devices are provided in which interconnection structures are formed using metal reflow techniques. For example, a method to fabricate a semiconductor device includes forming an opening in ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735051","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735051","citation_suggestion":"Patentable. \"Semiconductor device interconnect structures formed by metal reflow process\" (US-9735051). https://patentable.app/patents/US-9735051","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735051","json":"https://patentable.app/api/llm-context/US-9735051","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:41:41.596Z"}