{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735052","patent":{"patent_number":"US-9735052","title":"Metal lines for interconnect structure and method of manufacturing same","assignee":null,"inventors":[],"filing_date":"2015-10-12T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor device includes forming a dielectric layer over a substrate, forming an etch-stop-layer (ESL) over the dielectric layer, forming a first patterned hard mask (HM) defining a first trench over the ESL, forming a second trench extending through the ESL and the dielectric layer. The second trench is adjacent the first trench. The method also includes filling in the first trench and the second trench with a first material layer, extending the first trench through the ESL and the dielectric layer while the first material layer is filled in the second trench to form an extended first trench, forming a first metal line within the extended first trench, forming a capping layer over the first metal line and removing a portion of the first metal line to form a first cut by using the ESL and the first material layer as an etch mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal lines for interconnect structure and method of manufacturing same","description":"A method for fabricating a semiconductor device includes forming a dielectric layer over a substrate, forming an etch-stop-layer (ESL) over the dielectric layer, forming a first patterned hard mask (H","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735052","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735052","citation_suggestion":"Patentable. \"Metal lines for interconnect structure and method of manufacturing same\" (US-9735052). https://patentable.app/patents/US-9735052","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735052","json":"https://patentable.app/api/llm-context/US-9735052","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:08:17.701Z"}