{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735061","patent":{"patent_number":"US-9735061","title":"Methods to form multi threshold-voltage dual channel without channel doping","assignee":null,"inventors":[],"filing_date":"2016-02-03T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"Methods to form multi Vt channels, including a single type of WF material, utilizing lower annealing temperatures and the resulting devices are disclosed. Embodiments include providing an interfacial-layer on a semiconductor substrate; forming a first high-k dielectric-layer on the interfacial-layer; forming a second high-k dielectric-layer and a first cap-layer, respectively, on the first high-k dielectric-layer; removing the second high-k dielectric and first cap layers in first and second regions; forming a second cap-layer on the first high-k dielectric-layer in the first and second regions and on the first cap-layer in a third region; performing an annealing process; removing the second cap-layer from all regions and the first cap-layer from the third region; forming a third high-k dielectric-layer over all regions; forming a work-function composition-layer and a barrier-layer on the third high-k dielectric-layer in all regions; removing the barrier-layer from the first region; and forming a gate electrode over all regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods to form multi threshold-voltage dual channel without channel doping","description":"Methods to form multi Vt channels, including a single type of WF material, utilizing lower annealing temperatures and the resulting devices are disclosed. Embodiments include providing an interfacial-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735061","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735061","citation_suggestion":"Patentable. \"Methods to form multi threshold-voltage dual channel without channel doping\" (US-9735061). https://patentable.app/patents/US-9735061","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735061","json":"https://patentable.app/api/llm-context/US-9735061","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:54.194Z"}