{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735063","patent":{"patent_number":"US-9735063","title":"Methods for forming fin structures","assignee":null,"inventors":[],"filing_date":"2015-08-19T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method includes providing a substrate having a first and a second plurality of fins with a first at least one dielectric material disposed thereon, removing upper portions of the first dielectric material to expose upper portions of the first and the second plurality of fins, removing the first dielectric material from the lower portions of the second plurality of fins to expose lower portions of the second plurality of fins, depositing a second at least one dielectric material on at least the upper and the lower exposed portions of the second plurality of fins and on the upper exposed portions of first plurality of fins, removing the second dielectric material to expose upper portions of the first and the second plurality of fins, and wherein the first dielectric material is different from the second dielectric material. The resulting structure may be operable for use as nFETs and pFETs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming fin structures","description":"A method includes providing a substrate having a first and a second plurality of fins with a first at least one dielectric material disposed thereon, removing upper portions of the first dielectric ma","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735063","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735063","citation_suggestion":"Patentable. \"Methods for forming fin structures\" (US-9735063). https://patentable.app/patents/US-9735063","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735063","json":"https://patentable.app/api/llm-context/US-9735063","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:59.912Z"}