{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735109","patent":{"patent_number":"US-9735109","title":"Semiconductor device and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"To restrict the deterioration of properties in a semiconductor device due to hydrogen, provided is a semiconductor device including a semiconductor substrate; a hydrogen absorbing layer that is provided above a top surface of the semiconductor substrate and formed of a first metal having a hydrogen absorbing property; a nitride layer that is provided above the hydrogen absorbing layer and formed of a nitride of the first metal; an alloy layer that is provided above the nitride layer and formed of an alloy of aluminum and a second metal; and an electrode layer that is provided above the alloy layer and formed of aluminum. A pure metal layer of the second metal is not provided between the electrode layer and the nitride layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method","description":"To restrict the deterioration of properties in a semiconductor device due to hydrogen, provided is a semiconductor device including a semiconductor substrate; a hydrogen absorbing layer that is provid","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735109","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735109","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method\" (US-9735109). https://patentable.app/patents/US-9735109","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735109","json":"https://patentable.app/api/llm-context/US-9735109","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:17:59.194Z"}