{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735142","patent":{"patent_number":"US-9735142","title":"Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate","assignee":null,"inventors":[],"filing_date":"2014-04-15T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of the high-frequency characteristics. In order to solve the above problems, a protecting element, having a first n+-type region—insulating region—second n+-type region arrangement is connected in parallel between two terminals of a protected element having a PN junction, Schottky junction, or capacitor. Since discharge can be performed between the first and second n+ regions that are adjacent each other, electrostatic energy that would reach the operating region of an FET can be attenuated without increasing the parasitic capacitance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate","description":"With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735142","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735142","citation_suggestion":"Patentable. \"Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate\" (US-9735142). https://patentable.app/patents/US-9735142","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735142","json":"https://patentable.app/api/llm-context/US-9735142","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:19.819Z"}