{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735153","patent":{"patent_number":"US-9735153","title":"Semiconductor device having fin-type field effect transistor and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-07-14T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A semiconductor device includes a first fin structure disposed on a substrate. The first fin structure extends in a first direction. A first sacrificial layer pattern is disposed on the first fin structure. The first sacrificial layer pattern includes a left portion and a right portion arranged in the first direction. A dielectric layer pattern is disposed on the first fin structure and interposed between the left and right portions of the first sacrificial layer pattern. A first active layer pattern extending in the first direction is disposed on the first sacrificial layer pattern and the dielectric layer pattern. A first gate electrode structure is disposed on a portion of the first active layer pattern. The portion of the first active layer is disposed on the dielectric layer pattern. The first gate electrode structure extends in a second direction crossing the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having fin-type field effect transistor and method of manufacturing the same","description":"A semiconductor device includes a first fin structure disposed on a substrate. The first fin structure extends in a first direction. A first sacrificial layer pattern is disposed on the first fin stru","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735153","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735153","citation_suggestion":"Patentable. \"Semiconductor device having fin-type field effect transistor and method of manufacturing the same\" (US-9735153). https://patentable.app/patents/US-9735153","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735153","json":"https://patentable.app/api/llm-context/US-9735153","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:52:18.375Z"}