{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735166","patent":{"patent_number":"US-9735166","title":"Method of manufacturing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-22T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device having good characteristics without variation and a method of manufacturing the same are provided. A part of a conductive layer for a floating gate is removed by using a spacer insulating film, a first insulating film, and a second insulating film as a mask. A floating gate having a tip portion is formed from the conductive layer for the floating gate, and a part of an insulating layer for a gate insulating film is exposed from the floating gate. The tip portion of the floating gate is further exposed by selectively removing the second insulating film among the second insulating film, the insulating layer for the gate insulating film, and the spacer insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device and semiconductor device","description":"A semiconductor device having good characteristics without variation and a method of manufacturing the same are provided. A part of a conductive layer for a floating gate is removed by using a spacer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735166","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735166","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device and semiconductor device\" (US-9735166). https://patentable.app/patents/US-9735166","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735166","json":"https://patentable.app/api/llm-context/US-9735166","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:15:06.840Z"}