{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735174","patent":{"patent_number":"US-9735174","title":"FDSOI—capacitor","assignee":null,"inventors":[],"filing_date":"2015-01-14T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":21,"abstract":"A method of manufacturing a semiconductor device including a capacitor structure is provided, including the steps of providing an SOI wafer comprising a substrate, a buried oxide (BOX) layer formed over the substrate and a semiconductor layer formed over the BOX layer, removing the semiconductor layer in a first region of the wafer to expose the BOX layer, forming a dielectric layer over the exposed BOX layer in the first region, and forming a conductive layer over the dielectric layer. Moreover, a semiconductor device including a capacitor formed on a wafer is provided, wherein the capacitor comprises a first capacitor electrode comprising a doped semiconductor substrate of the wafer, a capacitor insulator comprising an ultra-thin BOX layer of the wafer and a high-k dielectric layer formed on the ultra-thin BOX layer, and a second capacitor electrode comprising a conductive layer formed over the high-k dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FDSOI—capacitor","description":"A method of manufacturing a semiconductor device including a capacitor structure is provided, including the steps of providing an SOI wafer comprising a substrate, a buried oxide (BOX) layer formed ov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735174","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735174","citation_suggestion":"Patentable. \"FDSOI—capacitor\" (US-9735174). https://patentable.app/patents/US-9735174","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735174","json":"https://patentable.app/api/llm-context/US-9735174","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:48:03.402Z"}