{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735244","patent":{"patent_number":"US-9735244","title":"Quasi-vertical structure having a sidewall implantation for high voltage MOS device and method of forming the same","assignee":null,"inventors":[],"filing_date":"2015-11-20T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a buried layer in a substrate, the buried layer having a first dopant type. The semiconductor device further includes a first layer over the buried layer, the first layer having the first dopant type. The semiconductor device further includes at least one first well in the first layer, the at least one first well having a second dopant type. The semiconductor device further includes an implantation region in a sidewall of the first layer, the implantation region having the second dopant type, wherein the implantation region is below the at least one first well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Quasi-vertical structure having a sidewall implantation for high voltage MOS device and method of forming the same","description":"A semiconductor device includes a buried layer in a substrate, the buried layer having a first dopant type. The semiconductor device further includes a first layer over the buried layer, the first lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735244","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735244","citation_suggestion":"Patentable. \"Quasi-vertical structure having a sidewall implantation for high voltage MOS device and method of forming the same\" (US-9735244). https://patentable.app/patents/US-9735244","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735244","json":"https://patentable.app/api/llm-context/US-9735244","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:33:07.476Z"}