{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735252","patent":{"patent_number":"US-9735252","title":"V-shaped SiGe recess volume trim for improved device performance and layout dependence","assignee":null,"inventors":[],"filing_date":"2016-05-11T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Some embodiments of the present disclosure relates to a method of forming a transistor device having a strained channel and an associated device. In some embodiments, the method is performed by performing a first etch of a substrate to produce a recess having a largest width at an opening along a top surface of the substrate. An etch stop layer is formed by doping a bottom surface of the recess with a dopant. A second etch of the recess is then performed to form a source/drain recess, wherein the etch stop layer resists etching of the second etch. A stress inducing material is formed within the source/drain recess onto the etch stop layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"V-shaped SiGe recess volume trim for improved device performance and layout dependence","description":"Some embodiments of the present disclosure relates to a method of forming a transistor device having a strained channel and an associated device. In some embodiments, the method is performed by perfor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735252","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735252","citation_suggestion":"Patentable. \"V-shaped SiGe recess volume trim for improved device performance and layout dependence\" (US-9735252). https://patentable.app/patents/US-9735252","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735252","json":"https://patentable.app/api/llm-context/US-9735252","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:20:02.424Z"}