{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735275","patent":{"patent_number":"US-9735275","title":"Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty","assignee":null,"inventors":[],"filing_date":"2015-12-18T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A method includes removing a top portion of a substrate after implantation of a punch through stopper into the substrate; epitaxially growing undoped material on the substrate, thereby forming a channel; filling a top portion of the channel with an intermediate implant forming a vertically bi-modal dopant distribution, with one doping concentration peak in the top portion of the channel and another doping concentration peak in the punch through stopper; and patterning fins into the channel and the punch though stopper to form a finFET structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty","description":"A method includes removing a top portion of a substrate after implantation of a punch through stopper into the substrate; epitaxially growing undoped material on the substrate, thereby forming a chann","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735275","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735275","citation_suggestion":"Patentable. \"Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty\" (US-9735275). https://patentable.app/patents/US-9735275","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735275","json":"https://patentable.app/api/llm-context/US-9735275","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:54:23.483Z"}