{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735280","patent":{"patent_number":"US-9735280","title":"Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film","assignee":null,"inventors":[],"filing_date":"2013-02-26T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":24,"abstract":"One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film","description":"One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735280","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735280","citation_suggestion":"Patentable. \"Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film\" (US-9735280). https://patentable.app/patents/US-9735280","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735280","json":"https://patentable.app/api/llm-context/US-9735280","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:20:19.354Z"}