{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735286","patent":{"patent_number":"US-9735286","title":"Thin film transistor substrate having high reliability metal oxide semiconductor material","assignee":null,"inventors":[],"filing_date":"2016-05-16T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin film transistor substrate having high reliability metal oxide semiconductor material","description":"The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735286","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735286","citation_suggestion":"Patentable. \"Thin film transistor substrate having high reliability metal oxide semiconductor material\" (US-9735286). https://patentable.app/patents/US-9735286","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735286","json":"https://patentable.app/api/llm-context/US-9735286","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:20:19.088Z"}