{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735289","patent":{"patent_number":"US-9735289","title":"Ion implantation-assisted etch-back process for improving spacer shape and spacer width control","assignee":null,"inventors":[],"filing_date":"2013-10-11T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Disclosed herein is a semiconductor device including a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semiconductor device further includes a second dielectric disposed vertically, substantially perpendicular to the substrate, at an edge of the gate, and a spacer disposed proximate to the second dielectric. The spacer includes a cross-section with a perimeter that includes a top curved portion and a vertical portion that is substantially perpendicular to the substrate. Further, disclosed herein, are methods associated with the fabrication of the aforementioned semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ion implantation-assisted etch-back process for improving spacer shape and spacer width control","description":"Disclosed herein is a semiconductor device including a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semicond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735289","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735289","citation_suggestion":"Patentable. \"Ion implantation-assisted etch-back process for improving spacer shape and spacer width control\" (US-9735289). https://patentable.app/patents/US-9735289","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735289","json":"https://patentable.app/api/llm-context/US-9735289","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:48:14.876Z"}