{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735292","patent":{"patent_number":"US-9735292","title":"High-voltage gallium nitride schottky diode","assignee":null,"inventors":[],"filing_date":"2016-02-29T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":23,"abstract":"A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-voltage gallium nitride schottky diode","description":"A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735292","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735292","citation_suggestion":"Patentable. \"High-voltage gallium nitride schottky diode\" (US-9735292). https://patentable.app/patents/US-9735292","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735292","json":"https://patentable.app/api/llm-context/US-9735292","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:03:05.596Z"}