{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9735305","patent":{"patent_number":"US-9735305","title":"Monolithically integrated fluorescence on-chip sensor","assignee":null,"inventors":[],"filing_date":"2015-09-21T00:00:00.000Z","publication_date":"2017-08-15T00:00:00.000Z","cpc_codes":["G01N","H01L","H01L","H01L","C12Q","G01N"],"num_claims":10,"abstract":"After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Monolithically integrated fluorescence on-chip sensor","description":"After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9735305","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9735305","citation_suggestion":"Patentable. \"Monolithically integrated fluorescence on-chip sensor\" (US-9735305). https://patentable.app/patents/US-9735305","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9735305","json":"https://patentable.app/api/llm-context/US-9735305","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:09.127Z"}