{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9739722","patent":{"patent_number":"US-9739722","title":"Reflective mask blank for EUV lithography, and process for its inspection and process for its production","assignee":null,"inventors":[],"filing_date":"2015-10-08T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["G01N","G01N","G01N"],"num_claims":12,"abstract":"A process for inspecting an EUV mask blank capable of distinguishing phase defects and amplitude defects and capable of detecting small amplitude defects, a process for producing an EUV mask blank using the inspection process, and an EUV mask blank obtainable by such a process. A process for inspecting a reflective mask blank for EUV lithography having a multilayer reflective film and an absorber layer. The process includes a first step of detecting in-plane defects in the multilayer reflective film by applying EUV light to the surface of the multilayer reflective film, a second step of detecting in-plane defects from the absorber layer by applying light having a wavelength of from 150 to 600 nm to the surface of the absorber layer, and a step of distinguishing phase defects and amplitude defects in the reflective mask blank by comparison between the first and second in-plane defect data."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reflective mask blank for EUV lithography, and process for its inspection and process for its production","description":"A process for inspecting an EUV mask blank capable of distinguishing phase defects and amplitude defects and capable of detecting small amplitude defects, a process for producing an EUV mask blank usi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9739722","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9739722","citation_suggestion":"Patentable. \"Reflective mask blank for EUV lithography, and process for its inspection and process for its production\" (US-9739722). https://patentable.app/patents/US-9739722","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9739722","json":"https://patentable.app/api/llm-context/US-9739722","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:46:41.664Z"}