{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741416","patent":{"patent_number":"US-9741416","title":"Memory devices based on gate controlled ferromagnestism and spin-polarized current injection","assignee":null,"inventors":[],"filing_date":"2016-09-12T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":9,"abstract":"Memory devices based on gate controlled ferromagnetism and spin-polarized current injection are provided. The device structure can include a two dimensional (2D) topological insulator (TI) having an active area body. One or a pair of ferromagnetic storage units are provided on top of the 2D TI with a dielectric and a gate thereon. A first contact can be at one end of the 2D TI and a second contact can be at the other end of the 2D TI, with the one or pair of ferromagnetic storage units on the 2D TI between the two contacts to facilitate 2D TI transport along a one-dimensional edge of the first and/or second lateral side. Application of biases via the gate and the first and second contacts enable read and write operations."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory devices based on gate controlled ferromagnestism and spin-polarized current injection","description":"Memory devices based on gate controlled ferromagnetism and spin-polarized current injection are provided. The device structure can include a two dimensional (2D) topological insulator (TI) having an a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741416","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741416","citation_suggestion":"Patentable. \"Memory devices based on gate controlled ferromagnestism and spin-polarized current injection\" (US-9741416). https://patentable.app/patents/US-9741416","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741416","json":"https://patentable.app/api/llm-context/US-9741416","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:43:45.748Z"}