{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741429","patent":{"patent_number":"US-9741429","title":"Memory with write assist circuit","assignee":null,"inventors":[],"filing_date":"2016-04-15T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device with an array of memory cells, a write driver circuit, and a write assist circuit is disclosed. The write driver circuit and the write assist circuit can be located opposite to one another relative to the array of memory cells. The write assist circuit can compensate for a parasitic element in bitlines by transferring write voltages to addressed memory cells located in a portion of a memory array opposite to the write driver circuit. The parasitic element can be, for example, a bitline path resistance that causes a voltage differential between a voltage at the output of the write driver circuit and another voltage at a bitline location associated with the addressed memory cell. The write assist circuit can compensate for the voltage differential at the bitline location associated with the addressed memory cell; thus improving the performance of memory write operations."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory with write assist circuit","description":"A memory device with an array of memory cells, a write driver circuit, and a write assist circuit is disclosed. The write driver circuit and the write assist circuit can be located opposite to one ano","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741429","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741429","citation_suggestion":"Patentable. \"Memory with write assist circuit\" (US-9741429). https://patentable.app/patents/US-9741429","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741429","json":"https://patentable.app/api/llm-context/US-9741429","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:21:44.990Z"}