{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741452","patent":{"patent_number":"US-9741452","title":"Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods","assignee":null,"inventors":[],"filing_date":"2015-09-23T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":27,"abstract":"Read-assist circuits for memory bit cells employing a P-type Field-Effect Transistor (PFET) read port(s) are disclosed. Related memory systems and methods are also disclosed. It has been observed that as node technology is scaled down in size, PFET drive current (i.e., drive strength) exceeds N-type FET (NFET) drive current for like-dimensioned FETs. In this regard, in one aspect, it is desired to provide memory bit cells having PFET read ports, as opposed to NFET read ports, to increase memory read times to the memory bit cells, and thus improve memory read performance. To mitigate or avoid a read disturb condition that could otherwise occur when reading the memory bit cell, read-assist circuits are provided for memory bit cells having PFET read ports."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods","description":"Read-assist circuits for memory bit cells employing a P-type Field-Effect Transistor (PFET) read port(s) are disclosed. Related memory systems and methods are also disclosed. It has been observed that","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741452","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741452","citation_suggestion":"Patentable. \"Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods\" (US-9741452). https://patentable.app/patents/US-9741452","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741452","json":"https://patentable.app/api/llm-context/US-9741452","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:45:46.560Z"}