{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741570","patent":{"patent_number":"US-9741570","title":"Method of manufacturing a reverse-blocking IGBT","assignee":null,"inventors":[],"filing_date":"2016-07-29T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of manufacturing a reverse-blocking IGBT (insulated gate bipolar transistor) includes forming a plurality of IGBT cells in a device region of a semiconductor substrate, forming a reverse-blocking edge termination structure in a periphery region of the semiconductor substrate which surrounds the device region, etching one or more trenches in the periphery region between the reverse-blocking edge termination structure and a kerf region of the semiconductor substrate, depositing a p-type dopant source which at least partly fills the one or more trenches and diffusing p-type dopants from the p-type dopant source into semiconductor material surrounding the one or more trenches, so as to form a continuous p-type doped region in the periphery region which extends from a top surface of the semiconductor substrate to a bottom surface of the semiconductor substrate after thinning of the semiconductor substrate at the bottom surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a reverse-blocking IGBT","description":"A method of manufacturing a reverse-blocking IGBT (insulated gate bipolar transistor) includes forming a plurality of IGBT cells in a device region of a semiconductor substrate, forming a reverse-bloc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741570","citation_suggestion":"Patentable. \"Method of manufacturing a reverse-blocking IGBT\" (US-9741570). https://patentable.app/patents/US-9741570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741570","json":"https://patentable.app/api/llm-context/US-9741570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:40:02.051Z"}