{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741573","patent":{"patent_number":"US-9741573","title":"NAND flash memory and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-11-18T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method is provided for fabricating a NAND flash memory. The method includes providing a semiconductor substrate having an isolation material layer formed on the semiconductor substrate, a selection gate material layer formed on the isolation material layer, and a plurality of alternately stacked gate dielectric material layers and control gate material layers formed on the selection gate material layer; forming a hard mask layer having a plurality of openings on a surface of the uppermost control gate material layer; forming a stacked gate structure on the semiconductor substrate, wherein the stacked gate structure includes a selection gate on the semiconductor substrate and control gates on the selection gate, and a width of the stacked gate structure is the same as a width of the hard mask layer on a top surface of the stacked gate structure; isolating the selection gate and the control gates by a gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"NAND flash memory and fabrication method thereof","description":"A method is provided for fabricating a NAND flash memory. The method includes providing a semiconductor substrate having an isolation material layer formed on the semiconductor substrate, a selection ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741573","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741573","citation_suggestion":"Patentable. \"NAND flash memory and fabrication method thereof\" (US-9741573). https://patentable.app/patents/US-9741573","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741573","json":"https://patentable.app/api/llm-context/US-9741573","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:27:35.123Z"}