{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741587","patent":{"patent_number":"US-9741587","title":"Semiconductor device and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2016-07-08T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"Provided are a semiconductor device manufacturing method and semiconductor device such that manufacturing can be simplified and the thickness of the semiconductor device can be reduced. The semiconductor device includes an insulated circuit substrate having on one main surface thereof a first metal layer and a second metal layer, a metal plate conductively connected to the first metal layer, a first semiconductor element including on front and rear surfaces thereof a plurality of metal electrodes, a first insulating member disposed on a side surface of the first semiconductor element, a second insulating member disposed on the first insulating member and on the first semiconductor element, and a third metal layer, in which at least one portion thereof is disposed on the second insulating member and which conductively connects the metal electrode of the first semiconductor element and the second metal layer on the insulated circuit substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method","description":"Provided are a semiconductor device manufacturing method and semiconductor device such that manufacturing can be simplified and the thickness of the semiconductor device can be reduced. The semiconduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741587","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741587","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method\" (US-9741587). https://patentable.app/patents/US-9741587","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741587","json":"https://patentable.app/api/llm-context/US-9741587","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:27:39.231Z"}