{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741625","patent":{"patent_number":"US-9741625","title":"Method of forming a semiconductor device with STI structures on an SOI substrate","assignee":null,"inventors":[],"filing_date":"2015-09-03T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In a first aspect, the present disclosure provides a method of forming a semiconductor device, including providing an SOI structure comprising a base substrate, a buried insulating material layer formed on the base substrate and an active semiconductor layer formed on the buried insulating structure, forming a germanium-comprising layer on an exposed surface of the active semiconductor layer, forming a trench isolation structure, the trench isolation structure extending through the germanium-comprising layer and the active semiconductor layer, performing an annealing process after the trench isolation structure is formed, the annealing process resulting in an oxide layer disposed on a germanium-comprising active layer which is formed on the buried insulating material layer, and removing the oxide layer for exposing an upper surface of the germanium-comprising active layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a semiconductor device with STI structures on an SOI substrate","description":"In a first aspect, the present disclosure provides a method of forming a semiconductor device, including providing an SOI structure comprising a base substrate, a buried insulating material layer form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741625","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741625","citation_suggestion":"Patentable. \"Method of forming a semiconductor device with STI structures on an SOI substrate\" (US-9741625). https://patentable.app/patents/US-9741625","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741625","json":"https://patentable.app/api/llm-context/US-9741625","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:11.397Z"}