{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741645","patent":{"patent_number":"US-9741645","title":"Dense interconnect with solder cap (DISC) formation with laser ablation and resulting semiconductor structures and packages","assignee":null,"inventors":[],"filing_date":"2011-12-21T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Dense interconnect with solder cap (DISC) formation with laser ablation and resulting semiconductor structures and packages are described. For example, a method of fabricating a semiconductor structure includes forming an insulative material stack above a plurality of solder bump landing pads. The solder bump landing pads are above an active side of a semiconductor die. A plurality of trenches is formed in the insulative material stack by laser ablation to expose a corresponding portion of each of the plurality of solder bump landing pads. A solder bump is formed in each of the plurality of trenches. A portion of the insulative material stack is then removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dense interconnect with solder cap (DISC) formation with laser ablation and resulting semiconductor structures and packages","description":"Dense interconnect with solder cap (DISC) formation with laser ablation and resulting semiconductor structures and packages are described. For example, a method of fabricating a semiconductor structur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741645","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741645","citation_suggestion":"Patentable. \"Dense interconnect with solder cap (DISC) formation with laser ablation and resulting semiconductor structures and packages\" (US-9741645). https://patentable.app/patents/US-9741645","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741645","json":"https://patentable.app/api/llm-context/US-9741645","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:29:28.542Z"}