{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741657","patent":{"patent_number":"US-9741657","title":"TSV deep trench capacitor and anti-fuse structure","assignee":null,"inventors":[],"filing_date":"2014-02-17T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A through-silicon-via (TSV) structure is formed within a trench located within a semiconductor structure. The TSV structure may include a first electrically conductive liner layer located on an outer surface of the trench and a first electrically conductive structure located on the first electrically conductive liner layer, whereby the first electrically conductive structure partially fills the trench. A second electrically conductive liner layer is located on the first electrically conductive structure, a dielectric layer is located on the second electrically conductive liner layer, while a third electrically conductive liner layer is located on the dielectric layer. A second electrically conductive structure is located on the third electrically conductive liner layer, whereby the second electrically conductive structure fills a remaining opening of the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"TSV deep trench capacitor and anti-fuse structure","description":"A through-silicon-via (TSV) structure is formed within a trench located within a semiconductor structure. The TSV structure may include a first electrically conductive liner layer located on an outer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741657","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741657","citation_suggestion":"Patentable. \"TSV deep trench capacitor and anti-fuse structure\" (US-9741657). https://patentable.app/patents/US-9741657","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741657","json":"https://patentable.app/api/llm-context/US-9741657","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:33:04.906Z"}