{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741718","patent":{"patent_number":"US-9741718","title":"High voltage CMOS with triple gate oxide","assignee":null,"inventors":[],"filing_date":"2015-07-20T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"An integrated circuit containing a first plurality of MOS transistors operating in a low voltage range, and a second plurality of MOS transistors operating in a mid voltage range, may also include a high-voltage MOS transistor which operates in a third voltage range significantly higher than the low and mid voltage ranges, for example 20 to 30 volts. The high-voltage MOS transistor has a closed loop configuration, in which a drain region is surrounded by a gate, which is in turn surrounded by a source region, so that the gate does not overlap field oxide. The integrated circuit may include an n-channel version of the high-voltage MOS transistor and/or a p-channel version of the high-voltage MOS transistor. Implanted regions of the n-channel version and the p-channel version are formed concurrently with implanted regions in the first and second pluralities of MOS transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage CMOS with triple gate oxide","description":"An integrated circuit containing a first plurality of MOS transistors operating in a low voltage range, and a second plurality of MOS transistors operating in a mid voltage range, may also include a h","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741718","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741718","citation_suggestion":"Patentable. \"High voltage CMOS with triple gate oxide\" (US-9741718). https://patentable.app/patents/US-9741718","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741718","json":"https://patentable.app/api/llm-context/US-9741718","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:42.175Z"}