{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741720","patent":{"patent_number":"US-9741720","title":"Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices","assignee":null,"inventors":[],"filing_date":"2016-07-26T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor structure includes a semiconductor substrate, n-type and p-type FinFETs on the substrate, each of the n-type and the p-type FinFETs include a channel region and a gate structure surrounding the channel region, each gate structure having a phase-changed high-k gate dielectric layer lining a gate trench thereof, the gate trench defined by a pair of spacers. The semiconductor structure further includes a conformal dielectric capping layer over each phase-changed high-k gate dielectric layer, the conformal dielectric capping layer having a higher dielectric constant than the phase-changed high-k gate dielectric layer. Further included on the n-type FinFETs is a multi-layer replacement gate stack of n-type work function material over the phase-changed high-k gate dielectric layer. A method of fabricating the semiconductor structure is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices","description":"A semiconductor structure includes a semiconductor substrate, n-type and p-type FinFETs on the substrate, each of the n-type and the p-type FinFETs include a channel region and a gate structure surrou","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741720","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741720","citation_suggestion":"Patentable. \"Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices\" (US-9741720). https://patentable.app/patents/US-9741720","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741720","json":"https://patentable.app/api/llm-context/US-9741720","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:50.311Z"}