{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741764","patent":{"patent_number":"US-9741764","title":"Memory device including ovonic threshold switch adjusting threshold voltage thereof","assignee":null,"inventors":[],"filing_date":"2016-09-06T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device may include a substrate, a first conductive line on the substrate and extending in a first direction, a second conductive line over the first conductive line and extending in a second direction crossing the first direction, a third conductive line over the second conductive line and extending in the first direction, a first memory cell at an intersection of the first conductive line and the second conductive line and including a first selection element layer and a first variable resistance layer, and a second memory cell at an intersection of the second conductive line and the third conductive line and including a second selection element layer and a second variable resistance layer. A first height of the first selection element layer in a third direction perpendicular to the first and second directions is different than a second height of the second selection element layer in the third direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device including ovonic threshold switch adjusting threshold voltage thereof","description":"A memory device may include a substrate, a first conductive line on the substrate and extending in a first direction, a second conductive line over the first conductive line and extending in a second ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741764","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741764","citation_suggestion":"Patentable. \"Memory device including ovonic threshold switch adjusting threshold voltage thereof\" (US-9741764). https://patentable.app/patents/US-9741764","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741764","json":"https://patentable.app/api/llm-context/US-9741764","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:21:02.343Z"}