{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741787","patent":{"patent_number":"US-9741787","title":"Methods and apparatus for high voltage integrated circuit capacitors","assignee":null,"inventors":[],"filing_date":"2016-11-10T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"High voltage integrated circuit capacitors are disclosed. In an example arrangement. A capacitor structure includes a semiconductor substrate; a bottom plate having a conductive layer overlying the semiconductor substrate; a capacitor dielectric layer deposited overlying at least a portion of the bottom plate and having a first thickness greater than about 6 um in a first region; a sloped transition region in the capacitor dielectric at an edge of the first region, the sloped transition region having an upper surface with a slope of greater than 5 degrees from a horizontal plane and extending from the first region to a second region of the capacitor dielectric layer having a second thickness lower than the first thickness; and a top plate conductor formed overlying at least a portion of the capacitor dielectric layer in the first region. Methods and additional apparatus arrangements are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods and apparatus for high voltage integrated circuit capacitors","description":"High voltage integrated circuit capacitors are disclosed. In an example arrangement. A capacitor structure includes a semiconductor substrate; a bottom plate having a conductive layer overlying the se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741787","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741787","citation_suggestion":"Patentable. \"Methods and apparatus for high voltage integrated circuit capacitors\" (US-9741787). https://patentable.app/patents/US-9741787","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741787","json":"https://patentable.app/api/llm-context/US-9741787","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:22:56.490Z"}