{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741791","patent":{"patent_number":"US-9741791","title":"Latchup reduction by grown orthogonal substrates","assignee":null,"inventors":[],"filing_date":"2016-03-07T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Latchup reduction by grown orthogonal substrates","description":"An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, im","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741791","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741791","citation_suggestion":"Patentable. \"Latchup reduction by grown orthogonal substrates\" (US-9741791). https://patentable.app/patents/US-9741791","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741791","json":"https://patentable.app/api/llm-context/US-9741791","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:23:18.032Z"}