{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741800","patent":{"patent_number":"US-9741800","title":"III-V multi-channel FinFETs","assignee":null,"inventors":[],"filing_date":"2015-07-31T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes insulation regions over portions of a semiconductor substrate, and a III-V compound semiconductor region over top surfaces of the insulation regions, wherein the III-V compound semiconductor region overlaps a region between opposite sidewalls of the insulation regions. The III-V compound semiconductor region includes a first and a second III-V compound semiconductor layer formed of a first III-V compound semiconductor material having a first band gap, and a third III-V compound semiconductor layer formed of a second III-V compound semiconductor material between the first and the second III-V compound semiconductor layers. The second III-V compound semiconductor material has a second band gap lower than the first band gap. A gate dielectric is formed on a sidewall and a top surface of the III-V compound semiconductor region. A gate electrode is formed over the gate dielectric."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III-V multi-channel FinFETs","description":"A device includes insulation regions over portions of a semiconductor substrate, and a III-V compound semiconductor region over top surfaces of the insulation regions, wherein the III-V compound semic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741800","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741800","citation_suggestion":"Patentable. \"III-V multi-channel FinFETs\" (US-9741800). https://patentable.app/patents/US-9741800","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741800","json":"https://patentable.app/api/llm-context/US-9741800","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:43.099Z"}